| PART |
Description |
Maker |
| M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M |
128K X 8 STANDARD SRAM, 100 ns, PDSO32
1048576-bit (131072-word by 8-bit) CMOS static SRAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| M5M51008KR-10LL-I M5M51008KR-70LL M5M51008KR-55LL |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
From old datasheet system
|
Mitsubishi
|
| M5M27C202FP-12 M5M27C202FP-15 M5M27C202J-12 M5M27C |
MB 41C 27#20 14#16 SKT RECP
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CXK5T81000ATN CXK5T81000ATN-10LLX CXK5T81000ATN-12 |
131072-word X 8-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
| HM658128A |
131072-word x 8-bit High Speed CMOS Pseudo Static RAM
|
Hitachi
|
| V29C31001T-45P V29C31001T-45T V29C51001T-45J V29C5 |
1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY 131072 × 85伏的CMOS闪存
1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY 131072 × 8伏的CMOS闪存
1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY 1131072 × 8伏的CMOS闪存
|
Mosel Vitelic, Corp.
|
| PD464318L PD464336L |
4M-Bit Bi-CMOS Synchronous Fast Static RAM(4M BiCMOS 同步快速静态RAM)
|
NEC Corp.
|
| AK62464Z |
65,536 x 24 Bit CMOS/BiCMOS Static Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK632512W-15 AK632512Z-20 |
524,288 x 32 Bit CMOS / BiCMOS Static Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
